PART |
Description |
Maker |
VDS4616A4A-7 VDS4616A4A VDS4616A4A-5 VDS4616A4A-6 |
Synchronous DRAM(512K X 16 Bit X 2 Banks)
|
A-DATA[A-Data Technology]
|
HY57V161610DTC-6I |
2 Banks x 512K x 16 Bit Synchronous DRAM
|
Hynix Semiconductor
|
M12L64322A-6TG M12L64322A-5BG |
512K x 32 Bit x 4 Banks Synchronous DRAM 2M X 32 SYNCHRONOUS DRAM, 5.5 ns, PDSO86 512K x 32 Bit x 4 Banks Synchronous DRAM 2M X 32 SYNCHRONOUS DRAM, 4.5 ns, PBGA90
|
Elite Semiconductor Memory Technology, Inc.
|
IC42S16101-6T IC42S16101-6TI IC42S16101-7TG IC42S1 |
512K x 16 Bit x 2 Banks (16-MBIT) SDRAM 12k × 16位2银行6兆)内存
|
Rohm Co., Ltd. Electronic Theatre Controls, Inc. Atmel, Corp.
|
HY57V161610D-I HY57V161610DTC-10I HY57V161610DTC-7 |
SDRAM - 16Mb 2 Banks x 512K x 16 Bit Synchronous DRAM
|
HYNIX[Hynix Semiconductor] Hynix Semiconductor Inc.
|
M32L32321SA-5Q M32L32321SA-6F M32L32321SA-6Q M32L3 |
From old datasheet system 512K x 32 Bit x 2 Banks Synchronous Graphic RAM
|
ETC
|
K4R881869 K4R881869M K4R881869M-NCK8 K4R881869M-NB |
288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
|
Samsung Electronic SAMSUNG [Samsung semiconductor] SAMSUNG[Samsung semiconductor]
|
K4S643232E-TL45 K4S643232E-TL55 K4S643232E-TL70 K4 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存512k × 32 × 4银行同步DRAM LVTTL 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存12k × 32 × 4银行同步DRAM LVTTL 512K x 32Bit x 4 Banks Synchronous DRAM Data Sheet
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
MT6V16M16 MT6V16M18 |
512K x 16 x 32 banks RDRAM(512K x 16 x 32同步动态RAM) 512K x 18 x 32 banks RDRAM(512K x 18 x 32同步动态RAM)
|
Micron Technology, Inc.
|